KSB794 Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSB794 Datasheet PDF : 4 Pages
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KSB794/795
Audio Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
: KSB794
- 60
V
: KSB795
- 80
V
VCEO
Collector-Emitter Volage
: KSB794
- 60
V
: KSB795
- 80
V
VEBO
IC
ICP
IB
PC
PC
TJ
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
-8
V
- 1.5
A
-3
A
- 0.15
A
1
W
10
W
150
°C
TSTG
Storage Temperature
* PW≤300µs, Duty Cycle≤10%
- 55 ~ 150
°C
R1.= 10 kΩ
R2.= 500Ω
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
ICER
ICEX1
ICEX2
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
* DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat) * Base-Emitter Saturation Voltage
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed.
VCB = - 60V, IE = 0
VCE = - 60V, RBE = 51Ω @ TC= 125°C
VCE = - 60V, VBE (off) = 1.5V
VCE = - 60V, VBE (off) = 1.5V
@ TC= 125°C
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 0.5A
VCE = - 2V, IC = - 1A
IC = - 1A, IB = - 1mA
IC = - 1A, IB = - 1mA
Min.
1000
2000
Max.
- 10
-1
- 10
-1
Units
µA
mA
µA
mA
- 1 mA
30000
-1.5
V
-2
V
hFE Classificntion
Classification
hFE2
R
2000 ~ 5000
O
4000 ~ 10000
Y
8000 ~ 30000
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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