IRL3202PBF Просмотр технического описания (PDF) - International Rectifier

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производитель

IRL3202PBF

HEXFET® Power MOSFET

International Rectifier 

1000

100

VGS

TOP 7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

BOTTOM 2.00V

BOTTOM 1.75V

IRL3202PbF

1000

100

VGS

TOP 7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

BOTTOM 2.00V

BOTTOM 1.75V

10

2.0V

20µs PULSE WIDTH

TJ= 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

2.0V

20µs PULSE WIDTH

TJ= 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

10

TJ = 25 °C

TJ = 150°C

V DS= 15V

20µs PULSE WIDTH

1

2

3

4

5

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = 48A

1.5

1.0

0.5

VGS= 4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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