BSP30 Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

BSP30

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

Switching Transistors

BSP 30 ... BSP 33

Characteristics (Tj = 25/C)

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

- IC = 150 mA, - IB = 15 mA

- VBEsat

–

- IC = 500 mA, - IB = 50 mA

- VBEsat

–

DC current gain – Kollektor-Basis-Stromverhältnis 1)

–

1V

–

1.2 V

- VCE = 5 V, - IC = 100 :A

- VCE = 5 V, - IC = 100 mA

- VCE = 5 V, - IC = 500 mA

hFE

BSP 30

BSP 32

hFE

hFE

- VCE = 5 V, - IC = 100 :A

- VCE = 5 V, - IC = 100 mA

- VCE = 5 V, - IC = 500 mA

hFE

BSP 31

BSP 33

hFE

hFE

Gain-Bandwidth Product – Transitfrequenz

10

–

–

40

–

120

30

–

–

30

–

–

100

–

300

50

–

–

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

fT

100 MHz

–

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

–

20 pF

–

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Switching times – Schaltzeiten

CEB0

–

120 pF

–

turn-on time

turn-off time

- ICon = 100 mA,

ton

- IBon = 5 mA, IBoff = 5 mA toff

Thermal resistance – Wärmewiderstand

–

–

500 ns

–

–

600 ns

junction to ambient air – Sperrschicht zu umgebender Luft

RthA

93 K/W 2)

junction to soldering point – Sperrschicht zu Lötpad

RthS

12 K/W

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BSP 40, BSP 41, BSP 42, BSP 43

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

3

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