BCW68H Просмотр технического описания (PDF) - Continental Device India Limited
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BCW68H Datasheet PDF : 3 Pages
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BCW67, A, B, C
BCW68, F, G, H
BCW67C, 68H
IC = 300 mA; VCE = 1 V
BCW67A, 68F
BCW67B, 68G
BCW67C, 68H
hFE
min.
max.
250
630
hFE
min.
35
hFE
min.
60
hFE
min.
100
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–VCBO
Collector–emitter voltage (open base)
–VCEO
Emitter–base voltage (open collector)
–VEBO
Collector current (d.c.)
–IC
Total power dissipation at Tamb = 25°C Ptot
Storage temperature
Tstg
max.
max.
max.
max.
max
45
60 V
32
45 V
5
V
800
mA
225
mW
–55 to +150 ° C
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a 556 556 556
°C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
BCW67 series
68 series
IC = 10 mA; IB = 0
IC = 10 mA; VEB = 0
Emitter–base breakdown voltage
V(BR)CEO min. 32
V(BR)CES min. 45
45 V
60 V
IE = 10 mA; IC = 0
Collector cut–off current
V(BR)EBO min.
5
V
VCE = 32 V; IE = 0 V
VCE = 45 V; IE = 0 V
VCE = 32 V; IE = 0 V; TA = 150°C
VCE = 45 V; IE = 0 V; TA = 150°C
Emitter cut–off current
ICES
ICES
ICES
ICES
max. 20
max. –
max. 10
max. –
– nA
20 nA
– mA
10 mA
VEB = 4 V; IC =0
Output capacitance at f = 1 MHz
IEBO
max.
20
nA
IE = 0; VCB = 10 V
Input capacitance at f = 1 MHz
Cc
max.
18
pF
IC = 0; VEB = 0.5 V
Ce
max.
105
pF
Saturation voltages
IC = 300 mA; IB = 30 mA
IC = 500 mA; IB = 50 mA
Noise figure at RS = 1 kW
IC = 0.2 mA; VCE = 5 V
f = 1 KHz, BW = 200 Hz
Transition frequency at f = 100 MHz
IC = 20 mA; VCE = 10 V
VCEsat max.
–VBEsat max.
NF
max.
fT
min.
1.5
V
2
V
10
dB
100
MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
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