MJE15030G Просмотр технического описания (PDF) - ON Semiconductor
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MJE15030G Datasheet PDF : 6 Pages
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MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
VCEO(sus)
Vdc
120
−
150
−
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031
ICEO
−
−
mAdc
0.1
0.1
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031
ICBO
−
−
mAdc
10
10
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
mAdc
10
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
−
40
−
40
−
40
−
20
−
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN to PNP)
hFE
Typ
2
3
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VCE(sat)
−
VBE(on)
−
Vdc
0.5
Vdc
1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
MHz
30
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.
TA TC
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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