J308 Просмотр технического описания (PDF) - Motorola => Freescale
Номер в каталоге
Компоненты Описание
производитель
J308 Datasheet PDF : 8 Pages
| |||
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by J308/D
JFET VHF/UHF Amplifiers
N–Channel — Depletion
3
GATE
1 DRAIN
J308
J309
J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
IGF
PD
25
Vdc
25
Vdc
10
mAdc
350
mW
2.8
mW/°C
Junction Temperature Range
TJ
– 65 to +125
Storage Temperature Range
Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C
°C
Symbol
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0, TA = 25°C)
(VGS = –15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
IGSS
VGS(off)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
IDSS
Gate–Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
VGS(f)
SMALL– SIGNAL CHARACTERISTICS
Common–Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J308
J309
J310
Re(yis)
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yos)
Common–Gate Power Gain
Gpg
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
v v 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 3.0%.
Min
– 25
—
—
– 1.0
– 1.0
– 2.0
12
12
24
—
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
–1.0
nAdc
—
–1.0
µAdc
Vdc
—
– 6.5
—
– 4.0
—
– 6.5
mAdc
—
60
—
30
—
60
—
1.0
Vdc
mmhos
0.7
—
0.7
—
0.5
—
0.25
—
mmhos
16
—
dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997
Share Link: 