2SB903 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SB903

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A, IB=-0.25A

ICBO

Collector cut-offcurrent

VCB=-40V;IE=0

IEBO

Emitter cut-offcurrent

VEB=-4V;IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE-2

DC current gain

IC=-6A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-5A ;IB1=-IB2=-0.5A;

VCC=-10V;RL=2Ω

‹ hFE-1 classifications

Q

R

S

70-140 100-200 140-280

Product Specification

2SB903

MIN TYP MAX UNIT

-60

V

-30

V

-6

V

-0.5

V

-0.1 mA

-0.1 mA

70

280

30

120

MHz

0.10

μs

0.30

μs

0.03

μs

2

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