2SD2583 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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2SD2583 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD2583 TRANSISTOR (NPN)
FEATURES
z Low VCE(sat)
z High DC Current Gain
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
0$5.,1*
D2583
zXXX
D2583 'HYLFH FoGH
Solid dot = Green molding compound
device, if none, the normal device
;;; &ode
Equivalent Circuit
ORDERING INFORMATION
Part Number
2SD2583
2SD2583-TU
Package
TO-126
TO-126
Packing Method
Bulk
Tube
Pack Quantity
200pcs/Bag
60pcs/Tube
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
30
6
5
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
www.cj-elec.com
1
C,Aug,2017
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