2SD718 Просмотр технического описания (PDF) - SavantIC Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SD718

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD718

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Base-emitter breakdown voltage

IC=50mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBE

Base-emitter voltage

IC=5A ; VCE=5V

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=5V

Cob

Output capacitance

IE=0 ; VCB=10V ;f=1MHz

MIN TYP. MAX UNIT

120

V

2.5

V

1.5

V

10

µA

10

µA

55

160

12

MHz

170

pF

hFE Classifications

R

O

55-110

80-160

2

Share Link: