FCP380N60E Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCP380N60E Datasheet PDF : 10 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.16
1.12
1.08
1.04
1.00
0.96
0.92
0.88
-80
*Notes:
1. VGS = 0V
2. ID = 10mA
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
vs. Case Temperature - FCP380N60E
100
Figure 8. On-Resistance Variation
vs. Temperature
2.8
2.4
2.0
1.6
1.2
0.8
0.4
-80
*Notes:
1. VGS = 10V
2. ID = 5A
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 10. Maximum Safe Operating Area
vs. Case Temperature - FCPF380N60E
100
10
1
0.1
0.1
10μs
100μs
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C7
10
1
0.1
0.01
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10μs
100μs
1ms
10ms
DC
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
6
5
4
3
2
1
0
0 100 200 300 400 500 600
VDS, Drain to Source Voltage [V]
4
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