F7413TRPBF-1 Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

F7413TRPBF-1

HEXFET® Power MOSFET

International Rectifier 

IRF7413PbF-1

10V

QGS

VG

QG

QGD

Charge

Fig 9a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2μF

.3μF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

100

VDS

VGS

RG

RD

D.U.T.

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+

-

VDD

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

D = 0.50

10

0.20

0.10

0.05

0.02

1

0.01

PDM

t1

0.1

0.0001

SINGLE PULSE

(THERMAL RESPONSE)

t2

Notes:

1. Duty factor D = t1 / t 2

2. Peak TJ = P DM x ZthJA + TA

0.001

0.01

0.1

1

10

100

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

5

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November 19, 2013

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