BUH51 Просмотр технического описания (PDF) - ON Semiconductor

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BUH51

SWITCHMODE™ NPN Silicon Planar Power Transistor

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BUH51

TYPICAL SWITCHING CHARACTERISTICS

VCE

dyn 1 µs

0V

dyn 3 µs

90% IB

1 µs

3 µs

IB

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

10

9

IC

8

7

6

5 Vclamp

4

3 IB

2

1

0

01

tsi

10% Vclamp

90% IB1

90% IC

tfi

10% IC

tc

2

3

4

5

6

7

8

TIME

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

1 µF

150 Ω

100 Ω

MTP8P10

3W

3W

100 µF

+10 V

MPF930

MPF930

MTP8P10

MUR105

RB1

Iout

A

VCE

IB1

IB

50 Ω

COMMON

500 µF

−Voff

MJE210

RB2

150 Ω

3W

MTP12N10

1 µF

V(BR)CEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

IC(pk) = 100 mA

VCE PEAK

IC PEAK

IB2

Inductive Switching

L = 200 µH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500 µH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

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