2SK4212A-ZK-E2-AY Просмотр технического описания (PDF) - Renesas Electronics
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2SK4212A-ZK-E2-AY Datasheet PDF : 9 Pages
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FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
75°C
10
150°C
1
0.1
0.1
Pulsed
VDS = 5 V
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
ID = 30 A
15
10
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
2SK4212A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
Pulsed
15
VGS = 4.5 V
10
10 V
5
0
0.1
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
VGS = 4.5 V
ID = 20 A
10
10 V, 30 A
5
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
12
11
10
9
8
7
6
5
4
3
2
1
0
0
VDD = 24 V
15 V
6V
ID = 30 A
5 10 15 20 25 30
QG - Gate Charge - nC
4
Data Sheet D20285EJ1V0DS
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