BUK9515-100A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9515-100A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9515-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
measured from contact screw on
mounting base to centre of die;
Tj = 25 °C
measured from drain lead 6 mm from
package to centre of die; Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
IS = 75 A; VGS = 0 V; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 75 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
100 -
-
V
89 -
-
V
1
1.5 2
V
-
-
2.3 V
0.5 -
-
V
-
-
500 µA
-
0.05 10 µA
-
2
100 nA
-
2
100 nA
-
-
16 mΩ
-
-
40.5 mΩ
-
11.5 14.4 mΩ
-
12
15
mΩ
-
6500 8600 pF
-
550 660 pF
-
325 400 pF
-
45
65
ns
-
130 195 ns
-
400 560 ns
-
130 190 ns
-
3.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
-
1.1 -
V
-
0.85 1.2 V
-
60
-
ns
-
0.24 -
µC
BUK9515-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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