FDPF4N60NZ_13 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDPF4N60NZ_13 Datasheet PDF : 10 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
30
10μs
10
100μs
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
Figure 11. Unclamped Inductive
Switching Capability
5
1000
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 1.9A
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
4
VGS = 10V
3
2
1
RθJC = 4.5oC/W
0
25
50
75
100
125
150
TC, Case Temperature [oC]
TJ = 125 oC
TJ = 25 oC
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
©2011 Fairchild Semiconductor Corporation
4
FDPF4N60NZ Rev. C1
www.fairchildsemi.com
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