STB4NK60Z_08 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB4NK60Z_08

N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

STMicroelectronics 

Electrical characteristics

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Figure 14. Normalized on resistance vs

temperature

Figure 15. Source-drain diode forward

characteristic

Figure 16. Avalanche energy vs temperature

8/20

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