MMBT3906(2003) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

MMBT3906
(Rev.:2003)

PNP Silicon Switching Transistors

Infineon Technologies 

DC current gain hFE = ƒ(IC)

VCE = 1 V, normalized

10 1

h FE 5

10 0

5

125 C

25 C

-55 C

SMBT3906/ MMBT3906

Saturation voltage IC = ƒ(VBEsat; VCEsat)

hFE = 10

EHP00774

2

mA

Ι C 10 2

5

VCE

10 1

5

EHP00767

VBE

10 -1

10 -1

5 10 0

5 10 1

mA 10 2

ΙC

Total power dissipation Ptot = ƒ(TA*; TS)

* Package mounted on epoxy

400

mW

Ptot

300

EHP00766

200

TA

TS

100

10 0

0

0.2 0.4 0.6

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

0.8 1.0 V 1.2

VBE sat , VCE sat

10 3

Ptot max

Ptot DC

5

10 2

5

10 1

5

EHP00936

D = tp

T

tp

T

D=

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0

10 0

0

50

100 ˚C 150

10 -6 10 -5 10 -4 10 -3 10 -2 s

10 0

TA; TS

tp

5

Jul-28-2003

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