FSBCW30 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

FSBCW30

PNP General Purpose Amplifier

Fairchild Semiconductor 

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

500

400 125 °C

VCE = 5V

300

25 °C

200

100 - 40 °C

0

0.01

0.1

1

10

100

IC - COLLECTOR CURRENT (mA)

PNP General Purpose Amplifier

(continued)

Collector-Emitter Saturation

Voltage vs Collector Current

0.3

0.25

0.2

β = 10

0.15

0.1

25 °C

0.05

0

0.1

125 ºC

- 40 ºC

1

10

100 300

I C - COLLECTOR CURRENT (mA)

P 68

Base-Emitter Saturation

Voltage vs Collector Current

1.2

β = 10

1

0.8

- 40 ºC

0.6

25 °C

125 ºC

0.4

0.2

0

0.1

1

10

100 300

I C - COLLECTOR CURRENT (mA)

Base Emitter ON Voltage vs

Collector Current

1

0.8

- 40 ºC

0.6

0.4

25 °C

125 ºC

0.2

0

0.1

VCE = 5V

1

10

100 200

I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current

vs. Ambient Temperature

100

V CB= 50V

10

1

0.1

0.01

25

50

75

100

125

TA- AMBIENT TEMPERATURE (ºC)

Collector-Emitter Breakdown

Voltage with Resistance

Between Emitter-Base

95

90

85

80

75

70

0.1

1

10

100

1000

RESISTANCE (kΩ)

FSBCW30, Rev B

Share Link: