BCP29 Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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Компоненты Описание

производитель

BCP29

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

Darlington Transistors

BCP 29, BCP 49

Characteristics (Tj = 25/C)

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

IC = 100 mA, IB = 0.1 mA

VCEsat

–

Base saturation voltage – Basis-Sättigungsspannung 1)

–

1V

IC = 100 mA, IB = 0.1 mA

VBEsat

–

DC current gain – Kollektor-Basis-Stromverhältnis 1)

–

1.5 V

VCE = 1 V, IC = 0.1 mA

BCP 29 hFE

4000

–

–

BCP 49 hFE

2000

–

–

VCE = 5 V, IC = 10 mA

BCP 29 hFE

10000

–

–

BCP 49 hFE

4000

–

–

VCE = 5 V, IC = 100 mA

BCP 29 hFE

BCP 49 hFE

20000

–

10000

–

–

–

VCE = 5 V, IC = 500 mA

BCP 29 hFE

BCP 49 hFE

4000

–

2000

–

–

–

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 50 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

–

200 MHz

–

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

–

6.5 pF

–

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

junction to soldering point – Sperrschicht zu Lötpad

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

RthA

93 K/W 2)

RthS

17 K/W

BCP 28, BCP 48

Pinning – Anschlußbelegung

4=2

1

2

3

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

5

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