BZT55C4V3_99 Просмотр технического описания (PDF) - Vishay Semiconductors
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BZT55C4V3_99 Datasheet PDF : 6 Pages
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BZT55C...
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
600
1.3
VZtn=VZt/VZ(25°C)
500
1.2
TKVZ=10 10–4/K
400
8 10–4/K
6 10–4/K
1.1
300
4 10–4/K
2 10–4/K
1.0
0
200
–2 10–4/K
–4 10–4/K
100
0.9
0
0
40
80
120 160 200
95 9602
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
0.8
–60 0
60
120 180 240
95 9599
Tj – Junction Temperature ( °C )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
15
Tj = 25°C
100
10
IZ=5mA
10
5
IZ=5mA
0
1
0
5
10
15
20
25
95 9598
VZ – Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under Oper-
ating Conditions at Tamb=25°C
–5
0
10
20 30
40
50
95 9600
VZ – Z-Voltage ( V )
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
200
150
VR = 2V
Tj = 25°C
100
50
0
0
5
10
15
20
25
95 9601
VZ – Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
Document Number 85601
Rev. 3, 01-Apr-99
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