BC849CW Просмотр технического описания (PDF) - Philips Electronics
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BC849CW Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC849W; BC850W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT323 plastic package.
handbook, halfpage
3
PNP complements: BC859W and BC860W.
3
MARKING
TYPE
NUMBER
BC849BW
BC849CW
MARKING
CODE(1)
2B∗
2C∗
TYPE
NUMBER
BC850BW
BC850CW
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING
CODE(1)
2F∗
2G∗
1
Top view
1
2
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC849W
BC850W
collector-emitter voltage
BC849W
BC850W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
30
V
−
50
V
−
30
V
−
45
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 12
2
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