PBSM5240PF Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSM5240PF
NXP Semiconductors.
PBSM5240PF Datasheet PDF : 20 Pages
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NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
PNP low VCEsat (BISS) transistor
Rth(j-a)
thermal resistance from
junction to ambient
N-channel Trench MOSFET
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max Unit
[1] -
-
115 K/W
[2] -
-
100 K/W
[3] -
-
165 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02 0.01
006aac610
0
1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
Fig 5.
FR4 PCB, single-sided copper, standard footprint
PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSM5240PF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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