AUIRFR4105 Просмотр технического описания (PDF) - International Rectifier

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производитель

AUIRFR4105

HEXFET® Power MOSFET

International Rectifier 

AUIRFR4105

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

1

0.1

0.1

20μs PULSE WIDTH

TC = 25°C

A

1

10

100

VDS , Drain-to-Source Voltage (V)

10

4.5V

1

0.1

0.1

20μs PULSE WIDTH

TC = 175°C

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 175°C

10

VDS = 25V

20μs PULSE WIDTH

1

A

4

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

2.4

ID = 26A

2.0

1.6

1.2

0.8

0.4

0.0

VGS = 10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

4

Fig 4. Normalized On-Resistance

Vs. Temperature

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