AUIRFR4105TRL Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

AUIRFR4105TRL

HEXFET® Power MOSFET

Infineon Technologies 

AUIRFR4105

VDS

L

RG

20V

tp

D.U.T

IAS

0.01

15V

DRIVER

+

-

VDD

A

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

140

ID

TOP

6.5A

120

11A

BOTTOM 16A

100

80

60

40

20

0 VDD = 25V

25

50

75

A

100

125

150

175

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Vds

Id

Vgs

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 13a. Gate Charge Waveform

6

Fig 13b. Gate Charge Test Circuit

2015-12-1

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