BB304M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

BB304M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi -> Renesas Electronics 

BB304M

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate1 to source voltage

Gate2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VG1S

VG2S

ID

Pch

Tch

Tstg

Ratings

Unit

12

V

+10

V

–0

±10

V

25

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 12

—

Gate1 to source breakdown voltage V(BR)G1SS +10 —

Gate2 to source breakdown voltage V(BR)G2SS ±10 —

Gate1 to source cutoff current

I G1SS

—

—

Gate2 to source cutoff current

I G2SS

—

—

Gate1 to source cutoff voltage

VG1S(off)

0.4

—

Gate2 to source cutoff voltage

VG2S(off)

0.5

—

—

V

—

V

—

V

+100 nA

±100 nA

1.0 V

1.0 V

ID = 200µA, VG1S = VG2S = 0

IG1 = +10µA, VG2S = VDS = 0

IG2 = ±10µA, VG1S = VDS = 0

VG1S = +9V, VG2S = VDS = 0

VG2S = ±9V, VG1S = VDS = 0

VDS = 5V, VG2S = 4V

ID = 100µA

VDS = 5V, VG1S = 5V

ID = 100µA

2

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