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ST2009DHI

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STMicroelectronics 

ST2009DHI

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

2.3

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICES Collector Cut-off

Current (VBE = 0)

VCE = 1500 V

VCE = 1500 V TC = 125 oC

IEBO

VCE(sat)∗

Emitter Cut-off Current

(IC = 0)

Collector-Emitter

Saturation Voltage

VEB = 4 V

IC = 5 A

IB = 1.25 A

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 5 A

IB = 1.25 A

hFE∗ DC Current Gain

IC = 1 A

IC = 5 A

IC = 5.5 A

VCE = 5 V

VCE = 1 V

VCE = 5 V

VF

Diode Forward Voltage IF = 5 A

INDUCTIVE LOAD

ts

Storage Time

tf

Fall Time

IC = 5 A

LBB(off) = 2 µH

f = 32 KHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

IBon(END) = 1 A

VBE(off) = -2.5 V

Min. Typ.

70

20

5

5

1.5

2.6

0.28

Max.

1

2

210

1.5

1.2

9

2

3.2

0.55

Unit

mA

mA

mA

V

V

V

µs

µs

Safe Operating Area

Thermal Impedance

2/6

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