BZT55B13(2006) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

BZT55B13
(Rev.:2006)

Small Signal Zener Diodes

Vishay Semiconductors 

Small Signal Zener Diodes

BZT55-Series

Vishay Semiconductors

Features

• Very sharp reverse characteristic

• Low reverse current level

e2

• Available with tighter tolerances

• Very high stability

• Low noise

• Lead (Pb)-free component

9612009

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

• Voltage stabilization

Mechanical Data

Case: QuadroMELF Glass case SOD80

Weight: approx. 34 mg

Packaging Codes/Options:

GS08 / 2.5 k per 7" reel 12.5 k/box

GS18 / 10 k per 13" reel 10 k/box

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Power dissipation

Z-current

RthJA ≤ 300 K/W

Junction temperature

Storage temperature range

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Junction to ambient air

on PC board

50 mm x 50 mm x 1.6 mm

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Forward voltage

IF = 200 mA

Symbol

Value

Unit

PV

500

mW

IZ

PV/VZ

mA

Tj

175

°C

Tstg

- 65 to + 175

°C

Symbol

Value

Unit

RthJA

500

K/W

Symbol

Min

Typ.

Max

Unit

VF

1.5

V

Document Number 85637

Rev. 1.5, 10-Mar-06

www.vishay.com

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