STD9N60M2 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD9N60M2, STP9N60M2, STU9N60M2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and

IPAK

ID

AM15862v1

(A)

Figure 3.

Thermal impedance for DPAK and

IPAK

10

1

OpeLrimatiitoendinbythmisaaxrReaDSi(son)

0.1

Tj=150°C

Tc=25°C

Single pulse

10µs

100µs

1ms

10ms

0.01

0.1

1

10

100 VDS(V)

Figure 4.

ID

(A)

Safe operating area for TO-220

Figure 5.

AM15864v1

Thermal impedance for TO-220

10

1

OpeLrimatiitoendinbythmisaaxrReaDSi(son)

0.1

Tj=150°C

Tc=25°C

Single pulse

10µs

100µs

1ms

10ms

0.01

0.1

1

10

100 VDS(V)

Figure 6. Output characteristics

ID

(A)

VGS=7, 8, 9, 10V

10

6V

8

Figure 7.

AM15865v1

ID

(A)

10

Transfer characteristics

VDS=17 V

8

AM15866v1

6

6

4

5V

4

2

4V

0

0

5

10

15

20 VDS(V)

2

0

0

2

4

6

8

10 VGS(V)

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DocID024399 Rev 2

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