2SD1895 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2SD1895 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Darlington Power Transistors
DESCRIPTION
·With TO-3PFa package
·Optimum for 90W HiFi output
·High foward current transfer ratio hFE
·Low collector-emitter saturation voltage
·Complement to type 2SB1255
APPLICATIONS
·Power amplification
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICP
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
www.jmnic.com
2SD1895
VALUE
160
140
5
15
8
100
3
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
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