MMBD6100LT3 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MMBD6100LT3

Monolithic Dual Switching Diode

ON Semiconductor 

MMBD6100LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 µAdc)

V(BR)

70

Reverse Voltage Leakage Current

(VR = 50 Vdc)

IR

—

Forward Voltage

(IF = 1.0 mAdc)

(IF = 100 mAdc)

VF

0.55

0.8

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)

trr

—

Capacitance

(VR = 0 V)

C

—

Max

Unit

—

Vdc

0.1

µAdc

Vdc

0.7

1.1

4.0

ns

2.5

pF

820 Ω

+10 V

2.0 k

100 µH IF

0.1 µF

DUT

50 Ω OUTPUT

PULSE

GENERATOR

0.1 µF

tr

tp

t

10%

50 Ω INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

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