GL1J Просмотр технического описания (PDF) - Diode Semiconductor Korea

Номер в каталоге

Компоненты Описание

производитель

GL1J

SURFACE MOUNT RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

GL1A- - -GL1M

FIG.1 -- FORWARD DERATING CURVE

1.2

Resistive or

inductive Load

1.0

0.8

0.6

0.4

0.2X0.2(5.0X5.0mm)

THICK COPPERPAND

AREAS

0.2

0

0

20 40 60

80 100 120 140 160

AMBIENT TEMPERATURE

FIG.2 PEAK FORWARD SURGE CURRENT

40

30

20

10

0

1

TJ=125℃

8.3m s Single H alf

S ine-W ave

2

4

8 10 2 0

4 0 6 0 8 0 100

NUMBER OF CYCLES AT 60Hz

FIG.3 -- TYPICAL FORWARD CHARACTERISTICS

100

10

TJ=25OC

1

0.1

Puise Width=300 S

1%DUTY CYCLE

0.01

0.4 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0

INSTANTANEOUS FORWARD VOLTAGE,VOLTS

FIG.4 -- TYPICAL REVERSE CHARACTERISTICS

100

10

TJ=125OC

1

TJ=75 OC

0.1

0.01

TJ=25OC

0.001

0

20

40

60

80

100

PERCENT OF RATED PEAK REVERSE VOLTAGE,

www.diode.kr

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