BAV103 Просмотр технического описания (PDF) - Semtech Electronics LTD.
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BAV103 Datasheet PDF : 2 Pages
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BAV101~BAV103
SILICON EPITAXIAL PLANAR DIODES
High Voltage General Purpose Diodes
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
BAV101
120
BAV102
VRRM
200
V
BAV103
250
Reverse Voltage
BAV101
100
BAV102
VR
150
V
BAV103
200
Continuous Forward Current
IF
250
mA
Repetitive Peak Forward Current
IFRM
625
mA
Non-repetitive Peak Forward Surge Current at t = 100 µs
3
at t = 1 s
IFSM
1
A
Total Power Dissipation
Ptot
400
mW
Thermal Resistance, Junction to Ambient
RθJA
300
K/W
Junction Temperature
Tj
175
OC
Storage Temperature Range
Tstg
- 65 to + 175
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
at IF = 200 mA
Reverse Current
at VR = 100 V
at VR = 150 V
at VR = 200 V
at VR = 100 V, Tj = 150 OC
at VR = 150 V, Tj = 150 OC
at VR = 200 V, Tj = 150 OC
VF
1
V
1.25
BAV101
BAV102
BAV103
IR
BAV101
BAV102
BAV103
100
nA
100
nA
100
nA
100
µA
100
µA
100
µA
Diode Capacitance
at f = 1 MHz, VR = 0
Cd
5
pF
Reverse Recovery Time
at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω
trr
50
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/11/2008
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