NPN SILICON PLANAR POWER TRANSISTOR
2N3772
TO-3
Metal Can Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
Second Breakdown
DESCRIPTION
Second Breakdown Energy with
Base Forward Biased
SYMBOL
IS/b
TEST CONDITION
VCE=60V,t=1.0 s,Nonrepetitive
MIN MAX UNITS
2.5
A
Dynamic Characteristics
Current Gain - Bandwidth Product
fT
IC=1.0A, VCE=4V, f=50KHz
0.2
Small Signal Current Gain
hfe
IC=1A, VCE=4V, f=1KHz
40
MHz
*Pulse Test: Pulse Width <300µs, Repetitive Rate 60 cps.