BU508AF Просмотр технического описания (PDF) - Inchange Semiconductor
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BU508AF Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508AF
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICP
Collector current (Pulse)
IB
Base current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
1500
700
7.5
8
15
4
6
34
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
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