2N6668G(2005) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2N6668G
(Rev.:2005)

Darlington Silicon Power Transistors

ON Semiconductor 

2N6667, 2N6668

3

2.5

TJ = 25°C

2

1.5

VBE(sat) @ IC/IB = 250

1

0.5

0.1

VBE @ VCE = 3 V

VCE(sat) @ IC/IB = 250

0.2 0.3 0.5 0.7 1

2 3 5 7 10

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical “On” Voltages

+5

+4

+3

*IC/IB ≤

hFE @ VCE + 3.0 V

3

+2

25°C to 150°C

+1

−55 °C to 25°C

0

−1

∗θVC for VCE(sat)

−2

−3 θVB for VBE

25°C to 150°C

−4

−55 °C to 25°C

−5

0.1

0.2 0.3 0.5 0.7 1

2 3 5 7 10

IC, COLLECTOR CURRENT (AMP)

Figure 12. Typical Temperature Coefficients

105

REVERSE

FORWARD

104

103

VCE = 30 V

102

101

100

10− 1

+0.6

TJ = 150°C

100°C

25°C

+0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 13. Typical Collector Cut−Off Region

http://onsemi.com

5

Share Link: