2SD1922 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SD1922

Silicon NPN Epitaxial

Renesas Electronics 

2SD1922

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

E to C diode forward current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

ic (peak)

ID

PC

Tj

Tstg

Ratings

Unit

25

V

25

V

6

V

0.8

A

1.5

A

0.8

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 25

—

voltage

Collector to emitter breakdown V(BR)CEO 25

—

voltage

Collector to emitter sustaining VCEO(sus) 25

—

voltage

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE

250 —

Collector to emitter saturation VCE(sat)

—

—

voltage

E to C diode forward voltage VD

Note: 1. Pulse test

—

—

Max Unit

—

V

35

V

35

V

—

V

0.2 µA

0.5 µA

0.2 µA

1200

0.3 V

1.1 V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IC = 0.8 A, RBE = ∞,

L = 20 mH

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 20 V, RBE = ∞

VEB = 5 V, IC = 0

VCE = 2 V, IC = 0.1 A*1

IC = 0.8 A, IB = 80 mA*1

ID = 0.8 A*1

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