2STW1693 Просмотр технического описания (PDF) - STMicroelectronics

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2STW1693

High power PNP epitaxial planar bipolar transistor

STMicroelectronics 

2STW1693

2 Electrical characteristics

Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

ICBO

Collector cut-off current

(IE = 0)

VCB = -100 V

IEBO

Emitter cut-off current

(IC = 0)

VEB = -6 V

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -1 mA

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = -100 µA

V(BR)CEO

Collector-emitter breakdown

voltage (IB = 0)

IC = -50 mA

VCE(sat) (1)

Collector-emitter saturation

voltage

IC = -2 A

IC = -6 A

VBE (1) Base-emitter voltage

VCE = -4 V

-6

-100

-80

IB = -200 mA

IB = -600 mA

IC = -6 A

Typ.

Max. Unit

-0.1 µA

-0.1 µA

V

V

V

-0.6 V

-1.5 V

-1.5 V

hFE DC current gain

IC = -2 A

VCE = -4 V

50

120

fT

Transition frequency

IC = -0.5 A

VCE = -12 V

CCBO

Collector-base capacitance

(IE = 0)

VCB = -10 V

f = 1 MHz

Resistive load

ton Turn-on time

tstg Storage time

tf

Fall time

IC = -3 A VCC = -30 V

IB1 = -IB2 = -0.3 A

1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%

20

80

0.18

0.6

0.09

MHz

pF

ns

ns

ns

3/9

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