2SA1216 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SA1216

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1216

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-8A ; VCE=-4V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-2A ; VCE=-12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-10A;RL=@

IB1=-IB2=-1A

VCC=-40V

MIN TYP. MAX UNIT

-180

V

-2.0

V

-100

µA

-100

µA

30

500

pF

40

MHz

0.30

µs

0.70

µs

0.20

µs

hFE classifications

O

Y

P

G

30-60 50-100 70-140 90-180

2

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