GS88118BT Просмотр технического описания (PDF) - Giga Semiconductor

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производитель

GS88118BT

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

Output Leakage Current

Output High Voltage

Output High Voltage

Output Low Voltage

Symbol

IIL

IIN1

IOL

VOH2

VOH3

VOL

GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–1 uA

–1 uA

–1 uA

–1 uA

1.7 V

2.4 V

—

Max

1 uA

1 uA

100 uA

1 uA

—

—

0.4 V

Rev: 1.05 11/2005

19/39

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2002, GSI Technology

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