BAV21 Просмотр технического описания (PDF) - Vishay Semiconductors
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BAV21 Datasheet PDF : 4 Pages
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BAV17, BAV18, BAV19, BAV20, BAV21
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
l = 4 mm, TL = constant
RthJA
Tj
Tstg
VALUE
300
175
- 65 to + 175
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
IF = 100 mA
VR = 20 V
VF
BAV17
IR
VR = 50 V
VR = 100 V
VR = 150 V
BAV18
IR
BAV19
IR
BAV20
IR
Reverse current
VR = 200 V
BAV21
IR
Tj = 100 °C, VR = 20 V
BAV17
IR
Tj = 100 °C, VR = 50 V
BAV18
IR
Tj = 100 °C, VR = 100 V
BAV19
IR
Tj = 100 °C, VR = 150 V
BAV20
IR
Tj = 100 °C, VR = 200 V
BAV21
IR
BAV17
V(BR)
25
Breakdown voltage
BAV18
V(BR)
60
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
BAV19
V(BR)
120
BAV20
V(BR)
200
BAV21
V(BR)
250
Diode capacitance
VR = 0 V, f = 1 MHz,
CD
Differential forward resistance
IF = 10 mA
rf
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA
RL = 100
trr
TYP.
1.5
5
MAX.
1000
100
100
100
100
100
15
15
15
15
15
50
UNIT
mV
nA
nA
nA
nA
nA
μA
μA
μA
μA
μA
V
V
V
V
V
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
100
Scattering Limit
10
1
0.1
VR = VRRM
Tj = 25 °C
100
10
1
Scattering Limit
0.01
0
94 9084
40
80
120 160 200
Tj - Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
0.1
0
94 9085
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.8, 02-Aug-12
2
Document Number: 85543
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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