BSS64 Просмотр технического описания (PDF) - Fairchild Semiconductor
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BSS64 Datasheet PDF : 5 Pages
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BSS64
C
SOT-23
Mark: U3
E
B
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
80
120
5.0
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BSS64
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation
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