MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC< 130oC, VGS = 10V)
Pulsed
EAS
Single Pulse Avalanche Energe
Power Dissipation
PD
Dreate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
-40
±20
-14
See Figure 4
84
50
0.34
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
Maximum Thermal Resistance Junction to Case
3
oC/W
RθJA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD4243
FDD4243_F085
Package
TO252
Reel Size
13”
Tape Width
12mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ
BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V
-40
-
ΔBVDSS Breakdown Voltage Temperature
ΔTJ Coefficient
ID = -250μA, referenced to 25°C -
-32
IDSS
Zero Gate Voltage Drain Current
VDS = -32V
-
-
TJ = 125oC
-
-
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
On Characteristics
Quantity
2500 units
Max Units
-
V
- mV/°C
-1
μA
-100
±100 nA
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on) Drain to Source On Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250μA
-1.4 -1.6 -3.0
V
ID = –250μA, referenced to 25°C -
4.7
- mV/°C
ID = -6.7A, VGS= -10V
ID = -5.5A, VGS= -4.5V
ID = -6.7A, VGS= -10V,
TJ = 150oC
ID = –6.7A, VDS = –5V,
-
36
44
-
48
64
mΩ
-
57
70
-
23
-
S
Ciss
Coss
Crss
RG
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
VDD = -20V, VGS = -10V
ID = -6.7A
-
1165 1550 pF
-
165 220
pF
-
90
135
pF
-
4
-
Ω
-
21
29
nC
-
3.4
-
nC
-
4
-
nC
FDD4243_F085 Rev. C
2
www.fairchildsemi.com