C4237 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

C4237

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4237

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0

800

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A

1.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1A

ICBO

Collector Cutoff Current

At rated Voltage

ICEO

Collector Cutoff Current

At rated Voltage

IEBO

Emitter Cutoff Current

At rated Voltage

www.iscsemi.cn hFE-1

DC Current Gain

hFE-2

DC Current Gain

fT

Current-Gain—Bandwidth Product

Switching times

IC= 5A ; VCE= 5V

IC= 1mA ; VCE= 5V

IC= 1A ; VCE= 10V

8

5

8

ton

Turn-on Time

tstg

Storage Time

IC= 5A , IB1= 1A; IB2= -2A

RL= 50Ω; VBB2= 4V

tf

Fall Time

1.5

V

100 μA

100 μA

100 μA

MHz

0.5 μs

3.5 μs

0.3 μs

isc Website：www.iscsemi.cn

2

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