81020 Просмотр технического описания (PDF) - STMicroelectronics

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81020

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

STMicroelectronics 

MSC81020

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

S ymb o l

Test Conditions

BVCBO

BVEBO

BVCER

ICBO

hFE

IC = 5mA

IE = 1mA

IC = 15mA

VCB = 28V

VCE = 5V

IE = 0mA

IC = 0mA

RBE = 10Ω

IC = 1000mA

Va l u e

Unit

Min. Typ. Max.

45 — — V

3.5 — — V

45 — — V

— — 5.0 mA

15 — 120 —

DYNAMIC

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POUT

ηc

GP

COB

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1 MHz

Test Conditions

PIN = 2.0 W

PIN = 2.0 W

PIN = 2.0 W

VCB = 28 V

TYPICAL PERFORMANCE

POWER OUTPUT vs FREQUENCY

VCC = 28 V

VCC = 28 V

VCC = 28 V

Value

Min. Typ. Max.

20 21 —

55 58 —

10 10.2 —

— — 19

Unit

W

%

dB

pF

COLLECTOR EFFICIENCY

vs FREQUENCY

RELATIVE POWER OUTPUT vs

COLLECTOR VOLTAGE

2/5

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