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HZS11NB3 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание
производитель
HZS11NB3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
HZS-N Series
Electrical Characteristics (Ta = 25°C)
Zener Voltage
Type
VZ (V)*
Grade Min
Max
HZS2.0N B1
1.88 2.10
B2
2.02 2.20
HZS2.2N B1
2.12 2.30
B2
2.22 2.41
HZS2.4N B1
2.33 2.52
B2
2.43 2.63
HZS2.7N B1
2.54 2.75
B2
2.69 2.91
HZS3.0N B1
2.85 3.07
B2
3.01 3.22
HZS3.3N B1
3.16 3.38
B2
3.32 3.53
HZS3.6N B1
3.47 3.68
B2
3.62 3.83
HZS3.9N B1
3.77 3.98
B2
3.92 4.14
HZS4.3N B1
4.05 4.26
B2
4.20 4.40
B3
4.34 4.53
HZS4.7N B1
4.47 4.65
B2
4.59 4.77
B3
4.71 4.91
HZS5.1N B1
4.85 5.03
B2
4.97 5.18
B3
5.12 5.35
HZS5.6N B1
5.29 5.52
B2
5.46 5.70
B3
5.64 5.88
HZS6.2N B1
5.81 6.06
B2
5.99 6.24
B3
6.16 6.40
Note: Tested with pulse (PW = 40ms)
Test
Condition
IZ (mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
Reverse Current
IR (µA)
Max
120
Test
Condition
VR (V)
0.5
120
0.7
120
1.0
100
1.0
50
1.0
20
1.0
10
1.0
5
1.0
5
1.0
5
1.0
5
1.5
5
2.5
5
3.0
Dynamic Resistance
rd (½)
Max
100
Test
Condition
IZ (mA)
5
100
5
100
5
110
5
120
5
120
5
120
5
120
5
120
5
100
5
70
5
40
5
30
5
2

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