CPV363M4KPBF Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

CPV363M4KPBF

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

Vishay Semiconductors 

CPV363M4KPbF

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

Vishay High Power Products

10

D = 0.50

1

0.20

0.10

0.05

0.02

0.1

0.01

SINGLE PULSE

(THERMAL RESPONSE)

PDM

Notes:

1. Duty factor D = t1 / t 2

t1

t2

0.01

0.00001

0.0001

0.001

0.01

2. Peak TJ = PDM x Z thJC + TC

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

1500

1200

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

900

Cies

600

300

Coes

Cres

0

1

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

1.0 V CC= 480V

V GE = 15V

TJ = 25 °C

0.8 IC = 6.0A

0.6

0.4

0.2

0.0

0

10

20

30

40

50

RRG , Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

20 VCC = 400V

I C = 6.0A

16

12

8

4

0

0

20

40

60

80

QG, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

10 RG = 1203ΩΩ

VGE = 15V

VCC = 480V

IC= 12 A

1

IC= 6 A

IC= 3 A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs. Junction Temperature

Document Number: 94485

Revision: 01-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

5

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