STM32F103C6 Просмотр технического описания (PDF) - STMicroelectronics
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STM32F103C6 Datasheet PDF : 67 Pages
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Revision history
8
Revision history
STM32F103xx
Table 48. Document revision history
Date
Revision
Changes
01-jun-2007
1
Initial release.
20-Jul-2007
Flash memory size modified in Note 5, Note 4, Note 6, Note 7 and
BGA100 pins added to Table 3: Pin definitions. Figure 5: STM32F103xx
performance line BGA100 ballout added.
THSE changed to TLSE in Figure 12: Low-speed external clock source AC
timing diagram. VBAT ranged modified in Power supply schemes.
tSU(LSE) changed to tSU(HSE) in Table 17: HSE 4-16 MHz oscillator
characteristics. IDD(HSI) max value added to Table 19: HSI oscillator
characteristics.
Sample size modified and machine model removed in Electrostatic
discharge (ESD).
Number of parts modified and standard reference updated in Static
latch-up. 25 °C and 85 °C conditions removed and class name modified
in Table 28: Electrical sensitivities. RPU and RPD min and max values
added to Table 29: I/O static characteristics. RPU min and max values
2
added to Table 32: NRST pin characteristics.
Figure 18: I2C bus AC waveforms and measurement circuit and
Figure 17: Recommended NRST pin protection corrected.
Notes removed below Table 7, Table 32, Table 37.
IDD typical values changed in Table 11: Maximum current consumption in
Run and Sleep modes. Table 33: TIMx characteristics modified.
tSTAB, VREF+ value, tlat and fTRIG added to Table 39: ADC characteristics.
In Table 24: Flash memory endurance and data retention, typical
endurance and data retention for TA = 85 °C added, data retention for TA
= 25 °C removed.
VBG changed to VREFINT in Table 10: Embedded internal reference
voltage. Document title changed. Controller area network (CAN) section
modified.
Figure 9: Power supply scheme modified.
Features on page 1 list optimized. Small text changes.
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