HN1B01FU Просмотр технического описания (PDF) - Toshiba

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HN1B01FU

Transistor Silicon PNP Epitaxial Type (PCTProcess) Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

HN1B01FU

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

HN1B01FU

Audio Frequency General Purpose Amplifier Applications

Q1:

z High voltage and high current

: VCEO = −50V, IC = −150mA (max)

z High hFE : hFE = 120~400

z Excellent hFE linearity

: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)

Unit in mm

Q2:

z High voltage and high current

: VCEO = 50V, IC = 150mA (max)

z High hFE : hFE = 120~400

z Excellent hFE linearity

: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Symbol

VCBO

VCEO

VEBO

IC

IB

Rating

−50

−50

−5

−150

−30

JEDEC

EIAJ

TOSHIBA

Weight: 6.8 mg

―

―

2-2J1A

Marking

Unit

V

V

V

mA

mA

1

2007-11-01

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