2N5460(2001) Просмотр технического описания (PDF) - ON Semiconductor
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2N5460 Datasheet PDF : 8 Pages
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ON Semiconductort
2 DRAIN
JFET Amplifiers
P–Channel — Depletion
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
3
GATE
1 SOURCE
Symbol
VDG
VGSR
IG(f)
PD
TJ
Tstg
Value
40
40
10
350
2.8
–65 to +135
–65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
2N5460
2N5461
2N5462
1
2
3
CASE 29–11, STYLE 7
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 µAdc, VDS = 0)
V(BR)GSS
40
—
—
Vdc
2N5460, 2N5461, 2N5462
Gate Reverse Current
IGSS
(VGS = 20 Vdc, VDS = 0)
2N5460, 2N5461, 2N5462
—
—
5.0
nAdc
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
2N5460, 2N5461, 2N5462
—
—
1.0
µAdc
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 µAdc)
2N5460
2N5461
2N5462
VGS(off)
0.75
—
1.0
—
1.8
—
6.0
Vdc
7.5
9.0
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
(VDS = 15 Vdc, ID = 0.2 mAdc)
(VDS = 15 Vdc, ID = 0.4 mAdc)
2N5460
2N5461
2N5462
VGS
Vdc
0.5
—
4.0
0.8
—
4.5
1.5
—
6.0
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order Number:
2N5460/D
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