2SD1553 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD1553

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA , IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.6A

ICBO

Collector cut-off current

VCB=500V; IE=0

hFE

DC current gain

IC=0.5A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

VF

Diode forward voltage

IF=2.5A

tf

Fall time

ICP=2A ;IB1(end)=0.6A

Product Specification

2SD1553

MIN TYP. MAX UNIT

5

V

5.0

8.0

V

1.5

V

10

µA

8

3

MHz

95

pF

1.6

2.0

V

0.5

1.0

µs

2

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